耶拿大学Andrey Turchanin、Antony George、图卢兹大学Bernhard Urbaszek等报道一种一锅化学气相沉积生长大面积单层双面(Janus)SeMoS材料的方法,SeMoS材料的中心过渡金属Mo原子上下层不对称,分别为Se和S原子。这种二维单层半导体材料的形成是因为热力学驱动的事先在S原子终端的Au箔表面生长的MoSe2单层底部Se原子交换导致。
本文要点
参考文献
Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real, Julian Picker, Emad Najafidehaghani, Francis Davies, Christof Neumann, Cedric Robert, Peter Wiecha, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Johannes Biskupek, Manuel Mundszinger, Robert Leiter, Ute Kaiser, Arkady V. Krasheninnikov, Bernhard Urbaszek, Antony George, Andrey Turchanin, Chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides, Adv. Mater. 2022
DOI: 10.1002/adma.202205226
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202205226